RN1301~RN1306

2010-04-06

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1301,RN1302,RN1303

RN1304,RN1305,RN1306

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors.

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2301 to RN2306

Equivalent Circuit and Bias Resistor Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1301 to 1306

50

V

RN1301 to 1304

10

Emitter-base voltage

RN1305, 1306

5

V

Collector current

100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN1301 to 1306

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

JEDEC

―

JEITA

SC-70

TOSHIBA

2-2E1A

Weight: 6 mg (typ.)

Unit: mm

Type No.

R1 (kΩ)R2 (kΩ)

RN1301

4.7

4.7

RN1302

10

10

RN1303

22

22

RN1304

47

47

RN1305

2.2

47

RN1306

4.7

47

USM