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W005G Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. W005G
Description  Glass Passivated Single-Phase Bridge Rectifier
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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 1 page
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W005G, W01G, W02G, W04G, W06G, W08G, W10G
www.vishay.com
Vishay General Semiconductor
Revision: 08-Jul-13
1
Document Number: 88769
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Typical IR less than 0.1 μA
• High case dielectric strength
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, adapter, charger, lighting ballaster on
consumers, and home appliances applications.
MECHANICAL DATA
Case: WOG
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals:
Silver
plated
leads,
solderable
per
J-STD-002 and JESD22-B102
Polarity: As marked on body
PRIMARY CHARACTERISTICS
Package
WOG
IF(AV)
1.5 A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
50 A
IR
5 μA
VF at IF = 1.0 A
1.0 V
TJ max.
150 °C
Diode variations
Quad
+
~
~
Case Style WOG
+
~
~
e4
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
W005G
W01G
W02G
W04G
W06G
W08G
W10G
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current at
0.375" (9.5 mm) lead length at TA = 25 °C
IF(AV)
1.5
A
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
50
A
Rating for fusing (t < 8.3 ms)
I2t10
A2s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUES
UNIT
Maximum instantaneous forward
voltage per diode
IF = 1.0 A
VF
1.0
V
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 25 °C
IR
5.0
μA
TA = 125 °C
500
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
14
pF




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