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VNV28N04 Datasheet(PDF) 3 Page - STMicroelectronics |
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VNV28N04 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 13 page  ELECTRICAL CHARACTERISTICS (continued) DYNAMIC Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it gfs ( ∗)Forward Transconductance VDS =13 V ID =14 A 9 18 S Coss Output Capacit ance VDS = 13V f = 1MHz Vin = 0 700 1100 pF SWITCHING (**) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime VDD =15 V Id =14 A Vgen =10 V Rgen =10 Ω (see f igure 3) 100 330 400 155 300 800 900 400 ns ns ns ns td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime VDD =15 V Id =14 A Vgen =10 V Rgen = 1000 Ω (see f igure 3) 450 1.7 7.5 3.4 900 4 25 10 ns µs µs µs (di/ dt)on Turn-on Current Slope VDD =15 V ID =14 A Vin =10 V Rgen =10 Ω 35 A/ µs Qi Total Input Charge VDD =12 V ID =10 A Vin = 10 V 60 nC SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it VSD ( ∗)Forward On Voltage ISD =14 A Vin =0 2 V trr ( ∗∗) Qrr ( ∗∗) IRRM ( ∗∗) Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A di/dt = 100 A/ µs VDD =30 V Tj =25 oC (see t est circuit, figure 5) 180 0. 45 7 ns µC A PROTECTION Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it Ilim Drain Current Limit Vin =10 V VDS =13 V Vin =5 V VDS =13 V 19 19 28 28 41 41 A A tdlim ( ∗∗) Step Response Current Limit Vin =10 V Vin =5 V 25 70 40 120 µs µs Tjsh ( ∗∗) Overtemperature Shutdown 150 oC Tjrs ( ∗∗) Overtemperature Reset 135 oC Igf ( ∗∗) Fault Sink Current Vin =10 V VDS =13 V Vin =5 V VDS =13 V 50 20 mA mA Eas ( ∗∗) Single Pulse Avalanche Energy st arting Tj =25 oCVDD =20 V Vin =10 V Rgen =1 K Ω L= 10 mH 2. 5 J ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ∗∗) Parameters guaranteed by design/characterization VNP28N04FI-VNB28N04-VNV28N04 3/13 Obsolete Product(s) - Obsolete Product(s) |
Similar Part No. - VNV28N04 |
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Similar Description - VNV28N04 |
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