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PESD3V3L4UW-115 Datasheet(PDF) 6 Page - NXP Semiconductors |
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PESD3V3L4UW-115 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 17 page PESDXL4UF_G_W_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 28 February 2008 6 of 17 NXP Semiconductors PESDxL4UF/G/W Low capacitance unidirectional quadruple ESD protection diode arrays [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5. [3] For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2. Cd diode capacitance f = 1 MHz; VR =0V PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW - 2228pF PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW - 1619pF VCL clamping voltage [1][2][3] PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW IPP = 1 A --8 V PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW IPP = 3 A --12 V PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW IPP = 1 A --10 V PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW IPP = 2.5 A - - 13 V rdif differential resistance IR =1mA PESD3V3L4UF PESD3V3L4UG PESD3V3L4UW - - 200 Ω PESD5V0L4UF PESD5V0L4UG PESD5V0L4UW - - 100 Ω Table 9. Characteristics …continued Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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