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SFT5013 Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SFT5013 Datasheet(HTML) 2 Page - Solid States Devices, Inc |
2 / 3 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0031J DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5013 and SFT5014 Series Case Outline: 4 PIN CLCC (LCC4) PIN 1: COLLECTOR PIN 2: EMITTER PIN 3: BASE PIN 4: N/C Case Outline: TO-39 (/39) PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR Electrical Characteristic 3/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage (IC = 200 µADC, RBE = 1 KΩ) 5013 5014 BVCER 800 900 –– –– V Collector–Base Breakdown Voltage (IC = 200 µADC) 5013 5014 BVCBO 800 900 –– –– V Emitter–Base Breakdown Voltage (IE = 50 µADC) BVEBO 5 11.5 –– V Collector Cutoff Current (VCB = 650 V) (VCB = 700 V) (VCB = 650 V, TC = 100°C) (VCB = 700 V, TC = 100°C) 5013 5014 5013 5014 ICBO –– –– –– –– –– –– –– –– 12 12 100 100 µAdc Emitter Cutoff Current (VEB= 4V) IEBO — 0.001 20 µA DC Current Gain 4/ (IC = 5 mADC, VCE = 10 VDC) (IC = 20 mADC, VCE = 10 VDC) hFE 10 30 60 70 - 180 –– Collector – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) VCE(Sat) –– 0.07 1.6 Vdc Base – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) VBE(Sat) –– 0.73 1.0 Vdc Current Gain Bandwidth Product (IC = 20 mADC, VCE = 10 VDC, f = 20 MHz) fT 20 30 –– MHz Output Capacitance (VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz) Cob –– 6.6 30 pF Delay Time Rise Time Storage Time Fall Time VCC= 125 VDC, IC= 100 mADC, IB1= 20 mADC, IB2= 20 mADC td tr ts tf –– –– –– –– 50 200 2200 400 200 1200 3000 800 nsec |
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