SFT5013 datasheet(2/3 Pages) SSDI

Part #	SFT5013

Description	0.5 AMP, 800 ??900 Volts NPN Transistor

Download	3 Pages

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Manufacturer	SSDI [Solid States Devices, Inc]

Direct Link	http://www.ssdi-power.com

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2 / 3 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: XN0031J

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFT5013 and SFT5014

Series

Case Outline: 4 PIN CLCC (LCC4)

PIN 1: COLLECTOR PIN 2: EMITTER PIN 3: BASE PIN 4: N/C

Case Outline: TO-39 (/39)

PIN 1: EMITTER

PIN 2: BASE

PIN 3: COLLECTOR

Electrical Characteristic

3/

Symbol

Min

Typ

Max

Units

Collector – Emitter Breakdown Voltage

(IC = 200 µADC, RBE = 1 KΩ)

5013

5014

BVCER

800

900

––

V

Collector–Base Breakdown Voltage

(IC = 200 µADC)

5013

5014

BVCBO

800

900

––

V

Emitter–Base Breakdown Voltage (IE = 50 µADC)

BVEBO

5

11.5

––

V

Collector Cutoff Current

(VCB = 650 V)

(VCB = 700 V)

(VCB = 650 V, TC = 100°C)

(VCB = 700 V, TC = 100°C)

5013

5014

5013

5014

ICBO

––

12

100

µAdc

Emitter Cutoff Current (VEB= 4V)

IEBO

—

0.001

20

µA

DC Current Gain

4/

(IC = 5 mADC, VCE = 10 VDC)

(IC = 20 mADC, VCE = 10 VDC)

hFE

10

30

60

70

-

180

––

Collector – Emitter Saturation Voltage

4/

(IC = 20 mADC, IB = 5 mADC)

VCE(Sat)

––

0.07

1.6

Vdc

Base – Emitter Saturation Voltage

4/

(IC = 20 mADC, IB = 5 mADC)

VBE(Sat)

––

0.73

1.0

Vdc

Current Gain Bandwidth Product

(IC = 20 mADC, VCE = 10 VDC, f = 20 MHz)

fT

20

30

––

MHz

Output Capacitance

(VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz)

Cob

––

6.6

30

pF

Delay Time

Rise Time

Storage Time

Fall Time

VCC= 125 VDC,

IC= 100 mADC,

IB1= 20 mADC,

IB2= 20 mADC

td

tr

ts

tf

––

50

200

2200

400

200

1200

3000

800

nsec

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