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LM4570 Datasheet(PDF) 8 Page - Texas Instruments |
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LM4570 Datasheet(HTML) 8 Page - Texas Instruments |
8 / 15 page 0 50 100 150 200 250 0 1 2 3 4 5 INPUT VOLTAGE (V) VDD = 5V LM4570 SNOSAV2B – APRIL 2006 – REVISED JULY 2009 www.ti.com Figure 20. Power Dissipation vs. Input Voltage EXPOSED-DAP MOUNTING CONSIDERATIONS The LM4570 is available in an 8-pin WSON package which features an exposed DAP (die attach paddle). The exposed DAP provides a direct thermal conduction path between the die and the PCB, improving the thermal performance by reducing the thermal resistance of the package. Connect the exposed DAP to GND through a large pad beneath the device, and multiple vias to a large unbroken GND plane. For best thermal performance, connect the DAP pad to a GND plane on an outside layer of the PCB. Connecting the DAP to a plane on an inner layer will result in a higher thermal resistance. Ensure efficient thermal conductivity by plugging and tenting the vias with plating and solder mask, respectively. POWER SUPPLY BYPASSING Good power supply bypassing is critical for proper operation. Locate both the REF1 and VDD bypass capacitors as close to the device as possible. Typical applications employ a regulator with a 10µF tantalum or electrolytic capacitor and a ceramic bypass capacitor which aid in supply stability. This does not eliminate the need for bypass capacitors near the LM4570. Place a 1µF ceramic capacitor as close to VDD as possible. Place a 0.1µF capacitor as close to REF1 as possible. Smaller values of CREF1 may be chosen for decreased turn on times. SHUTDOWN FUNCTION The LM4570 features a low power shutdown mode that disables the device and reduces quiescent current consumption to 0.1µA. Driving /SD Low disables the amplifiers and bias circuitry, and drives VREF1and the outputs to GND. Connect /SD to VDD for normal operation. 8 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Links: LM4570 |
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