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STF1N105K3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STF1N105K3 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 18 page STF1N105K3, STFW1N105K3, STP1N105K3 Electrical characteristics Doc ID 023509 Rev 2 5/18 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off delay time Fall time V DD = 525 V, I D = 0.6 A, R G =4.7 Ω, V GS =10 V (see Figure 20) - 6 7 27 50 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM Source-drain current Source-drain current (pulsed) - 1.4 5.6 mA A V SD (1) 1. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 1.2 A, V GS =0 - 1.5 V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 1.2 A, V DD = 60 V di/dt = 100 A/μs, (see Figure 19) - 244 1 9 ns μC A t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 1.2 A,V DD = 60 V di/dt=100 A/μs, Tj=25 °C (see Figure 19) - 330 1.3 8 ns μC A |
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