THS9001

SLOS426C – NOVEMBER 2003 – REVISED DECEMBER 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

AVAILABLE OPTIONS

PACKAGE TYPE

TRANSPORT MEDIA, QUANTITY

THS9001DBVT

Tape and Reel, 250

SOT-23-6

THS9001DBVR

Tape and Reel, 3000

(1)

For the most current package and ordering information, see the Package Option Addendum at the end

of this document, or see the TI Web site at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

Over operating free-air temperature (unless otherwise noted)

(1)

UNIT

5.5

Input voltage

Continuous power dissipation

See Dissipation Rating

table

Maximum junction temperature

150°C

125°C

Storage temperature

–65 to 150°C

ESD Ratings

HBM

2000

:

CDM

1500

MM

100

(1)

The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may

cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are

stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.

(2)

The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may

result in reduced reliability and/or lifetime of the device.

DISSIPATION RATING TABLE

PACKAGE

(°C/W)

(°C/W)

70.1

215

463 W

185 mW

(1)

Power rating is determined with a junction temperature of 125°C. Thermal management of the final PCB should strive to keep the

junction temperature at or below 125°C for best performance.

(2)

This data was taken using the JEDEC standard High-K test PCB.

RECOMMENDED OPERATING CONDITIONS

MIN

NOM

MAX

UNIT

Supply voltage

2.7

5

V

Operating free-air temperature,

–40

85

°C

Supply current

100

mA

2

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