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SSM3K324R Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM3K324R Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page SSM3K324R 2012-12-21 1 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K324R ○ Power Management Switch Applications ○ DC-DC Converter • 1.8V drive • Low ON-resistance: RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) : RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±12 V Drain current DC ID(Note 1) 4.0 A Pulse IDP(Note 1,2) 10 Power dissipation PD (Note 3) 1 W t ≦ 10s 2 Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150 °C during use. Note 2: PW ≦ 10ms,Duty ≦ 1 % Note 3: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking Equivalent Circuit (top view) Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3Z1A Weight: 11 mg (typ.) 1. Gate 2. Source 3. Drain SOT-23F KFD 1 2 3 1 2 3 |
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