SSM3K324R

2012-12-21

1

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM3K324R

○

Power Management Switch Applications

○

DC-DC Converter

• 1.8V drive

Characteristic

Symbol

Rating

Unit

Drain-source voltage

30

V

Gate-source voltage

±12

V

Drain current

DC

4.0

A

Pulse

10

Power dissipation

1

W

t

≦

10s

2

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: The channel temperature should not exceed 150

°C during use.

Note 2: PW

≦

10ms,Duty

≦

1

％

Note 3: Mounted on a FR4 board.

(25.4 mm

Marking

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

and pad area. When using this device, please take heat dissipation into consideration.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3Z1A

Weight: 11 mg (typ.)

1. Gate

2. Source

3. Drain

SOT-23F

KFD

1

2

3

1

2

3