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7MBI75N-060 Datasheet(PDF) 4 Page - Fuji Electric |
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7MBI75N-060 Datasheet(HTML) 4 Page - Fuji Electric |
4 / 8 page 0,001 0,01 0,1 1 0,01 0,1 1 Brake IGBT IGBT Diode Transient thermal resistance Pulse width : PW [sec] 0 100 200 300 400 0 100 200 300 400 500 400V 300V V CC=200V 0 5 10 15 20 25 Dynamic input characteristics T j=25°C Gate charge : Q G [nC] 10 100 10 100 1000 t f t r t off t on Switching time vs. R G V CC=300V, IC=75A, VGE=±15V, Tj=25°C Gate resistance : R G [Ω ] 0 1 2 3 4 0 25 50 75 100 125 150 175 T j=125°C 25°C Forward current vs. Forward voltage V GE=OV Forward voltage : V F [V] 0 25 50 75 100 125 10 100 I rr 25°C t rr 25°C t rr 125°C I rr 125°C Reverse recovery characteristics t rr, Irr vs. IF Forward current : I F [A] 0 100 200 300 400 500 600 0 100 200 300 400 500 600 700 RBSOA (Repetitive pulse) SCSOA (non-repetitive pulse) Reversed biased safe operating area +V GE=15V, -VGE<15V, Tj<125°C, RG>33Ω Collector-Emitter voltage : V CE [V] |
Similar Part No. - 7MBI75N-060 |
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Similar Description - 7MBI75N-060 |
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