NTP45N06 datasheet(4/7 Pages) ONSEMI

Part #	NTP45N06

Description	Power MOSFET 45 Amps, 60 Volts N?묬hannel TO??20 and D2PAK

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NTP45N06, NTB45N06

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GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

(VOLTS)

Qg, TOTAL GATE CHARGE (nC)

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ, STARTING JUNCTION TEMPERATURE (°C)

1000

100

10

1

0.1

1000

100

1

12

10

8

6

4

2

0

280

240

200

160

120

80

40

0

50

40

30

20

10

0

10

3600

3200

10

2800

2400

15

5

020

2000

1600

1200

800

0

5

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

25

0

16

20

12

824

4

1

10

100

0.6

0.76 0.8

0.72

0.68

0.92

0.64

1.04

0.10

10

100

1

25

125

150

100

75

175

50

400

0.84 0.88

0.96

10

28

32

36

1

ID = 45

TJ = 25°C

VGS

VGS = 0 V

VDS = 0 V

TJ = 25°C

Crss

Ciss

Coss

Crss

Ciss

VGS = 20 V

SINGLE PULSE

TC = 25°C

VDS = 30 V

ID = 45 A

VGS = 10 V

VGS = 0 V

TJ = 25°C

ID = 45 A

tr

td(off)

td(on)

tf

RDS(on) Limit

QT

Q2

Q1

10 ms

1 ms

100

ms

dc

VGS

VDS

Thermal Limit

Package Limit

Similar Part No. - NTP45N06

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NTP45N06 Datasheet(PDF) 4 Page - ON Semiconductor

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