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2SK2354 Datasheet(PDF) 1 Page - NEC |
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2SK2354 Datasheet(HTML) 1 Page - NEC |
1 / 8 page MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis- tor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 Package QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2353/2354) VDSS 450/500 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±4.5 A Drain Current (pulse)* ID(pulse) ±18 A Total Power Dissipation (Tc = 25 ˚C) PT1 30 W Total Power Dissipation (Ta = 25 ˚C) PT2 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current** IAS 4.5 A Single Avalanche Energy** EAS 17.4 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The information in this document is subject to change without notice. © 1994 DATA SHEET Document No. TC-2499 (O. D. No. TC-8047) Date Published November 1994 P Printed in Japan 10.0 ±0.3. 0.7 ±0.1 2.7 ±0.2 4.5 ±0.2 3.2 ±0.2 2.5 ±0.1 0.65 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 2.54 1. Gate 2. Drain 3. Source Drain Body Diode Gate Source 12 3 PACKAGE DIMENSIONS (in millimeters) MP-45F (ISOLATED TO-220) |
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