GaN-SiC Broadband Amplifier

RUP15050-10

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

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Version 2.0

Precautions

This product is a Wideband Pallet Amplifier based on a Gallium Nitride Transistor.

The Gallium Nitride Transistor requires a Negative Voltage Bias which operates alongside a Positive Voltage Bias. These Biases are

applied in accordance to the Sequence during Turn-On and Turn-Off.

The Pallet Amplifier does not have a built-in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and

negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier.

The required sequence for power supply is as follows.

During Turn-On

1. Connect GND to Pin 4(GND).

2. Apply +5V to Pin 2(Ref.).

5. Turn on the pin 2 and pin 3, then turn on the pin 1.

6. Apply the RF Power.

During Turn-Off

1. Turn off RF power.

2. Turn off pin 1, then turn off the pin 3 and pin 2.

3. Remove all connections.

Turn On

Turn Off

Sequence Timing Diagram

Mechanical Specifications

PARAMETER

UNIT

VALUE

LIMIT

Dimensions ( L x W x H )

mm

100.0 x 50.0 x 16.0

Max

RF Connectors In/Out

-

Available SMA Female

-

Cooling

-

External Heat sink + airflow

-