MOS FIELD EFFECT TRANSISTOR

2SK2341

DESCRIPTION

The 2SK2341 is N-channel Power MOS Field Effect Transis-

tor designed for high voltage switching applications.

FEATURES

°C)

Drain to Source Voltage

250

V

Gate to Source Voltage

±30

V

Drain Current (DC)

±11

A

Drain Current (pulse)

±44

A

35

W

2.0

W

Storage Temperature

–55 to +150

°C

Channel Temperature

150

°C

Single Avalanche Current

11

A

Single Avalanche Energy

320

mJ

*PW

≤ 10

µs, Duty Cycle ≤ 1 %

The diode connected between the gate and source of the

transistor serves as a protector against ESD. When this device

is actually used, an additional protection circuit is externally

required if a voltage exceeding the rated voltage may be

applied to this device.

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

Document No.

TC-2511

(O.D. No.

TC–8070)

Date Published

January 1995 P

Printed in Japan

10.0 ± 0.3

φ3.2 ± 0.2

4.5 ± 0.2

2.7 ± 0.2

2.5 ± 0.1

0.65 ± 0.1

1.5 ± 0.2

2.54 TYP.

1.3 ± 0.2

2.54 TYP.

0.7 ± 0.1

12 3

1. Gate

2. Drain

3. Source

MP-45F(SIOLATED TO-220)

Body diode

Source (S)

Drain (D)

Gate (G)

12 3

PACKAGE DIMENSIONS

(in millimeters)

©

1995

DATA SHEET