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2SK2341 Datasheet(PDF) 1 Page - NEC |
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2SK2341 Datasheet(HTML) 1 Page - NEC |
1 / 8 page MOS FIELD EFFECT TRANSISTOR 2SK2341 DESCRIPTION The 2SK2341 is N-channel Power MOS Field Effect Transis- tor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A) • LOW Ciss Ciss = 1090 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 250 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID (DC) ±11 A Drain Current (pulse) ID (pulse)* ±44 A Total Power Dissipation (TC = 25 °C) PT1 35 W Total Power Dissipation (Ta = 25 °C) PT2 2.0 W Storage Temperature Tstg –55 to +150 °C Channel Temperature Tch 150 °C Single Avalanche Current IAS** 11 A Single Avalanche Energy EAS** 320 mJ *PW ≤ 10 µs, Duty Cycle ≤ 1 % **Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. TC-2511 (O.D. No. TC–8070) Date Published January 1995 P Printed in Japan 10.0 ± 0.3 φ3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 2.5 ± 0.1 0.65 ± 0.1 1.5 ± 0.2 2.54 TYP. 1.3 ± 0.2 2.54 TYP. 0.7 ± 0.1 12 3 1. Gate 2. Drain 3. Source MP-45F(SIOLATED TO-220) Body diode Source (S) Drain (D) Gate (G) 12 3 PACKAGE DIMENSIONS (in millimeters) © 1995 DATA SHEET |
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