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2SK3363-01 Datasheet(PDF) 3 Page - Fuji Electric |
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2SK3363-01 Datasheet(HTML) 3 Page - Fuji Electric |
3 / 4 page 3 0 50 100 150 200 250 300 0 5 10 15 20 25 15V Vcc=24V Typical Gate Charge Characteristics VGS=f(Qg):ID=100A,Tch=25°C 0 5 10 15 20 25 Qg [nC] VGS VDS 2SK3363-01 FUJI POWER MOSFET -50 0 50 100 150 0 5 10 15 20 max. typ. Drain-source on-state resistance RDS(on)=f(Tch):ID=50A,VGS=10V Tch [°C] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 max. typ. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Tch [°C] 10 -2 10 -1 10 0 10 1 10 2 100p 1n 10n 100n Typical capacitances C=f(VDS):VGS=0V,f=1MHz VDS [V] Ciss Coss Crss 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 20 40 60 80 100 120 140 160 180 200 220 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C 10V 5V VGS=0V VSD [V] t-ID 10 -1 10 0 10 1 10 2 10 1 10 2 10 3 10 4 ID [A] td(off) tf tr td(on) Typical Switching Characteristics vs. ID t=f(ID):Vcc=15V,VGS=10V,RG=10 Ω |
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