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2SK3270-01 Datasheet(PDF) 1 Page - Fuji Electric |
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2SK3270-01 Datasheet(HTML) 1 Page - Fuji Electric |
1 / 2 page 2SK3270-01 N-channel MOS-FET Trench Gate MOSFET 60V 6,5m Ω ±80A 135W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 60 V Continous Drain Current I D ±80 A Pulsed Drain Current I D(puls) ±320 A Gate-Source-Voltage VGS +30 / -20 V Maximum Avalanche Energy E AV 613 mJ* Max. Power Dissipation P D 135 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C * L=0,13mH, VCC=24V - Electrical Characteristics (TC=25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage BV DSS ID=1mA VGS=0V 60 V Gate Threshhold Voltage V GS(th) ID=10mA VDS=VGS 2,5 3,0 3,5 V Zero Gate Voltage Drain Current I DSS VDS=60V Tch=25°C 1,0 100,0 µA VGS=0V Tch=125°C 10,0 500,0 µA Gate Source Leakage Current I GSS VGS=±30V VDS=0V 10 100 nA Drain Source On-State Resistance R DS(on) ID=40A VGS=10V 5,0 6,5 m Ω Forward Transconductance g fs ID=40A VDS=10V 25 50 S Input Capacitance C iss VDS=25V 9000 pF Output Capacitance C oss VGS=0V 1250 pF Reverse Transfer Capacitance C rss f=1MHz 700 pF Turn-On-Time ton (ton=td(on)+tr) t d(on) VCC=30V 50 ns t r VGS=10V 200 ns Turn-Off-Time toff (ton=td(off)+tf) t d(off) ID=80A 150 ns t f RGS=10 Ω 135 ns Avalanche Capability I AV L = 100µH Tch=25°C 80 A Diode Forward On-Voltage V SD IF=80A VGS=0V Tch=25°C 1,0 1,5 V Reverse Recovery Time t rr IF=50A VGS=0V 85 ns Reverse Recovery Charge Q rr -dIF/dt=100A/µs Tch=25°C 0,25 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to ambient 75,0 °C/W R th(ch-c) channel to case 0,926 °C/W |
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