ZTX360 datasheet(1/1 Pages) DIODES

Part #	ZTX360

Description	NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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NPN SILICON PLANAR

HIGH SPEED SWITCHING TRANSISTOR

ISSUE 2 MARCH 94

FEATURES

* 40 Volt VCEO

* 1 Amp continuous current

* Fast switching

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

5V

Continuous Collector Current

IC

1A

Power Dissipation at Tamb=25°C

Ptot

500

W

Operating and Storage Temperature Range

Tj:Tstg

-55 to +175

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Emitter

Sustaining Voltage

VCEO(SUS) 40

V

IC=10mA, IB=0*

Collector Cut-Off

Current

ICBO

500

300

nA

µ

A

VCB=40V, IE=0

VCB=40V, IE=0, Tamb=150°C

Collector-Emitter

Saturation Voltage

VCE(sat)

0.6

V

IC=500mA, IB=50mA*

Base-Emitter

Saturation Voltage

VBE(sat)

0.7

1.2

V

IC=500mA, IB=50mA*

Static Forward Current

Transfer Ratio

hFE

25

150

IC=500mA, VCE=1V*

Transition Frequency

fT

200

MHz

IC=50mA, VCE=10V,

f=100MHz

Input Capacitance

Cib

36

50

pF

VEB=0.5V, IC=0, f=1MHz

Output Capacitance

Cob

5.75

10

pF

VCB=10V, IE=0, f=1MHz

Turn-On Time

ton

40

ns

VCC=30V, IC=500mA,

IB(on)=50mA, -VBE(off)=2V

Turn-Off Time

toff

75

ns

VCC=30V, IC=500mA,

IB(on)=-IB(off)=50mA

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

E-Line

TO92 Compatible

ZTX360

3-166

C

B

E

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