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STI16N65M5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STI16N65M5 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 20 page STF/I/P/U/W16N65M5 Electrical characteristics Doc ID 15210 Rev 4 5/20 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td (v) tr (v) tf (i) tc(off) Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 8 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21) (see Figure 24) - 25 7 6 8 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 12 48 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 12 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V (see Figure 24) - 300 3.5 23 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 24) - 350 4 24 ns µC A |
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Similar Description - STI16N65M5 |
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