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ZXMN2AM832TC Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMN2AM832TC Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 7 page ZXMN2AM832 ISSUE 3 - JANUARY 2005 4 SEMICO NDUC TORS PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS 20 V ID=250 A, VGS=0V Zero Gate Voltage Drain Current IDSS 1 AVDS=20V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS=±12V, VDS=0V Gate-Source Threshold Voltage VGS(th) 0.7 V I D =250 A, VDS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.09 0.12 0.30 VGS=4.5V, ID=4A VGS=2.5V, ID=1.5A Forward Transconductance (3) gfs 6.2 S VDS=10V,ID=4A DYNAMIC (3) Input Capacitance Ciss 299 pF VDS=15 V, VGS=0V, f=1MHz Output Capacitance Coss 60 pF Reverse Transfer Capacitance Crss 33 pF SWITCHING (2) (3) Turn-On Delay Time td(on) 2.31 ns VDD =10V, ID=4A RG≅6.0 ,VGS=5V Rise Time tr 2.60 ns Turn-Off Delay Time td(off) 1.55 ns Fall Time tf 1.31 ns Total Gate Charge Qg 3.1 nC VDS=10V,VGS=4.5V, ID=4A Gate-Source Charge Qgs 0.7 nC Gate-Drain Charge Qgd 1.0 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.9 0.95 V TJ=25°C, IS=3.2A, VGS=0V Reverse Recovery Time (3) trr 23 ns TJ=25°C, IF=4A, di/dt= 100A/ s Reverse Recovery Charge (3) Qrr 5.65 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width 300 s. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. Not Recommended for New Design Please Use ZXMN2AMCTA |
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