Electronic Components Datasheet Search |
|
STB200N6F3 Datasheet(PDF) 5 Page - STMicroelectronics |
|
STB200N6F3 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page STB200N6F3, STI200N6F3, STP200N6F3 Electrical characteristics Doc ID 15606 Rev 2 5/16 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 120 480 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD=120 A, VGS=0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120 A, di/dt = 100 A/µs, VDD=48 V, Tj=150 °C (see Figure 17) - 67 177.6 5.3 ns nC A |
Similar Part No. - STB200N6F3 |
|
Similar Description - STB200N6F3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |