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ZXTD3M832 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZXTD3M832
Description  DUAL 40V PNP LOW SATURATION TRANSISTOR
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTD3M832 Datasheet(HTML) 2 Page - Diodes Incorporated

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ZXTD3M832
SEMICO NDUC TORS
ISSUE 1 - JUNE 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)(f)
R JA
83.3
C/W
Junction to Ambient
(b)(f)
R JA
51
C/W
Junction to Ambient
(b)(f)
R JA
125
C/W
Junction to Ambient
(d)(f)
R JA
111
C/W
Junction to Ambient
(d)(g)
R JA
73.5
C/W
Junction to Ambient
(e)(g)
R JA
41.7
C/W
NOTES
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t 5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all
exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual
device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight,
1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=500mW
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-7.5
V
Peak Pulse Current
ICM
-4
A
Continuous Collector Current
(a) (f)
IC
-3
A
Base Current
IB
-1000
mA
Power Dissipation at TA=25°C
(a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/ C
Power Dissipation at TA=25°C
(b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/ C
Power Dissipation at TA=25°C
(c)(f)
Linear Derating Factor
PD
1
8
W
mW/ C
Power Dissipation at TA=25°C
(d)(f)
Linear Derating Factor
PD
1.13
9
W
mW/ C
Power Dissipation at TA=25°C
(d)(g)
Linear Derating Factor
PD
1.7
13.6
W
mW/ C
Power Dissipation at TA=25°C
(e)(g)
Linear Derating Factor
PD
3
24
W
mW/ C
Operating & Storage Temperature Range
Tj:Tstg
-55 to +150
C
Junction Temperature
Tj
150
C
ABSOLUTE MAXIMUM RATINGS
OBSOLETE - PLEASE USE ZXTD720MC


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