Electronic Components Datasheet Search |
|
THS4303RGTTG4 Datasheet(PDF) 2 Page - Texas Instruments |
|
|
THS4303RGTTG4 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 30 page www.ti.com ABSOLUTE MAXIMUM RATINGS (TOP VIEW) RGT PACKAGE 1 2 3 4 5 6 7 8 12 11 10 9 16 15 14 13 NC = No connect VS− VS+ VOUT THS4303 SLOS421B – NOVEMBER 2003 – REVISED JANUARY 2005 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. over operating free-air temperature range unless otherwise noted(1) UNIT VS Supply voltage 6 V VI Input voltage ±V S IO Output current 200 mA Continuous power dissipation See Dissipation Rating Table TJ((2)) Maximum junction temperature 150 °C TJ((3)) Maximum junction temperature, continuous operation, longterm reliability 125 °C TA Operating free-air temperature range –40 °C to 85°C Tstg Storage temperature range –65 °C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300 °C ESD ratings: HBM 3000 CDM 1500 MM 200 (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) The THS4303 device may incorporate a PowerPAD™ on the underside of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which can permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the PowerPAD thermally enhanced package. (3) The absolute maximum temperature under any condition is limited by the constraints of the silicon process. 2 |
Similar Part No. - THS4303RGTTG4 |
|
Similar Description - THS4303RGTTG4 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |