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THS4303RGTTG4 Datasheet(PDF) 2 Page - Texas Instruments

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Part # THS4303RGTTG4
Description  WIDEBAND FIXED-GAIN AMPLIFIER
Download  30 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

THS4303RGTTG4 Datasheet(HTML) 2 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
(TOP VIEW)
RGT PACKAGE
1
2
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12
11
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9
16 15 14 13
NC = No connect
VS−
VS+
VOUT
THS4303
SLOS421B – NOVEMBER 2003 – REVISED JANUARY 2005
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated
circuits be handled with appropriate precautions. Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
over operating free-air temperature range unless otherwise noted(1)
UNIT
VS
Supply voltage
6 V
VI
Input voltage
±V
S
IO
Output current
200 mA
Continuous power dissipation See Dissipation Rating Table
TJ((2))
Maximum junction temperature
150
°C
TJ((3))
Maximum junction temperature, continuous operation, longterm reliability
125
°C
TA
Operating free-air temperature range
–40
°C to 85°C
Tstg
Storage temperature range
–65
°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
300
°C
ESD ratings:
HBM
3000
CDM
1500
MM
200
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The THS4303 device may incorporate a PowerPAD™ on the underside of the chip. This acts as a heatsink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which can permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the
PowerPAD thermally enhanced package.
(3)
The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
2


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