PMPB12UN datasheet(1/15 Pages) PHILIPS

Part #	PMPB12UN

Description	20 V single N-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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PMPB12UN

20 V single N-channel Trench MOSFET

6 July 2012

Product data sheet

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1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

• Trench MOSFET technology

• Very fast switching

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

• Exposed drain pad for excellent thermal conduction

• Tin-plated 100 % solderable side pads for optical solder inspection

1.3 Applications

• Charging switch for portable devices

• DC-to-DC converters

• Power management in battery-driven portables

• Hard disk and computing power management

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

-

20

V

VGS

gate-source voltage

Tj = 25 °C

-8

-

8

V

ID

drain current

VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s

[1]

-

11.3

A

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C

-

14

18

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

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