NTD60N02R.35 datasheet(2/8 Pages) ONSEMI

Part #	NTD60N02R.35

Description	Power MOSFET 62 A, 25 V, N?묬hannel, DPAK

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NTD60N02R

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

25

−

27.5

25.5

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

1.5

10

mAdc

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)

IGSS

−

±100

nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.5

4.1

2.0

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 4.5 Vdc, ID = 15 Adc)

(VGS = 10 Vdc, ID = 20 Adc)

(VGS = 10 Vdc, ID = 31 Adc)

RDS(on)

−

11.2

8.4

8.2

12.5

10.5

−

m

W

Forward Transconductance (VDS = 10 Vdc, ID = 15 Adc) (Note 3)

gFS

−

27

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 20 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

1000

1330

pF

Output Capacitance

Coss

−

480

640

Transfer Capacitance

Crss

−

180

225

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(VGS = 10 Vdc, VDD = 10 Vdc,

ID = 31 Adc, RG = 3.0 W)

td(on)

−

7.0

−

ns

Rise Time

tr

−

33

−

Turn−Off Delay Time

td(off)

−

19

−

Fall Time

tf

−

9.0

−

Gate Charge

(VGS = 4.5 Vdc, ID = 31 Adc,

VDS = 10 Vdc) (Note 3)

QT

−

9.5

14

nC

QGS

−

2.2

−

QGD

−

5.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 20 Adc, VGS = 0 Vdc) (Note 3)

(IS = 31 Adc, VGS = 0 Vdc)

(IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

0.88

1.15

0.80

1.2

−

Vdc

Reverse Recovery Time

(IS = 31 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms) (Note 3)

trr

−

29.1

−

ns

ta

−

13.6

−

tb

−

15.5

−

Reverse Recovery Stored Charge

Qrr

−

0.02

−

mC

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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