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NTD70N03RT4G Datasheet(PDF) 4 Page - ON Semiconductor |
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NTD70N03RT4G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 7 page NTD70N03R http://onsemi.com 4 10 0 10 15 20 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 3000 1000 0 VGS VDS 1500 500 55 VGS = 0 V VDS = 0 V TJ = 25°C CISS COSS CRSS 2000 2500 CRSS CISS Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 030 8 2 0 QG, TOTAL GATE CHARGE (nC) ID = 36 A TJ = 25°C 10 4 6 QGD 10 VDD = 10 V QT QGS 20 Figure 9. Resistive Switching Time Variation versus Gate Resistance RG, GATE RESISTANCE (OHMS) 1 10 100 1000 1 100 tr td(off) td(on) tf 10 VDS = 10 V ID = 36 A VGS = 10 V 80 0 0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) VGS = 0 V TJ = 25°C Figure 10. Diode Forward Voltage versus Current 0.6 0.8 1.6 10 20 30 1.0 1.2 40 60 50 70 1.4 Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.1 1 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 10 10 VGS = 20 V SINGLE PULSE TC = 25°C 1 ms 100 ms 10 ms dc 10 ms 80 0 0 Tmb ( °C) Figure 12. Normalized Continuous Drain Current as a function of Mounting Base Temperature 50 200 100 40 120 150 |
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