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C2M0040120D Datasheet(PDF) 7 Page - Cree, Inc |
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C2M0040120D Datasheet(HTML) 7 Page - Cree, Inc |
7 / 10 page 7 C2M0040120D Rev - Typical Performance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30 External Gate Resistor RG(ext) (Ohms) EOff EOn ETotal Conditions: TJ = 25 °C VDD = 800 V IDS = 40 A VGS = -5/+20 V FWD = C4D20120A L = 80 μH 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) Conditions: IDS = 40 A VDD = 800 V RG(ext) = 2.5 Ω VGS = -5/+20 V FWD = C4D20120A L = 80 µH EOff EOn ETotal 0 10 20 30 40 50 60 70 80 90 100 0 4 8 12 16 20 External Gate Resistor, RG(ext) (Ohms) Conditions: TJ = 25 °C VDD = 800 V RL = 20 Ω VGS = -5/+20 V td (off) td (on) tf tr Figure 25. Clamped Inductive Switching Energy vs. R G(ext) Figure 26. Clamped Inductive Switching Energy vs. Junction Temperature Figure 27. Resistive Switching Times vs. External Gate Resistor (V DD = 800V, ID = 40A) Figure 28. Resistive Switching Time Description |
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