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CPW3-0600S002 Datasheet(PDF) 2 Page - Cree, Inc

Part # CPW3-0600S002
Description  Silicon Carbide Schottky Diode Chip
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

CPW3-0600S002 Datasheet(HTML) 2 Page - Cree, Inc

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CPW3-0600S002 Rev. A
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
V
F
Forward Voltage
1.5
1.8
1.8
2.4
V
I
F = 2 A
T
J=25°C
I
F = 2 A
T
J=175°C
I
R
Reverse Current
10
20
50
100
μA
V
R = 600 V
T
J=25°C
V
R = 600 V
T
J=175°C
Q
C
Total Capacitive Charge
4.8
nC
V
R = 600 V, IF = 2 A
di/dt = 500 A/μs
T
J = 25°C
C
Total Capacitance
120
12
11
pF
V
R = 0 V, TJ = 25°C, f = 1 MHz
V
R = 200 V, TJ = 25˚C, f = 1 MHz
V
R = 400 V, TJ = 25˚C, f = 1 MHz
Note:
1. Assumes θJC Thermal Resistance of 3.8˚C/W or less
Mechanical Parameters
Parameter
Typ.
Unit
Die Size
1.07 x 0.66
mm
Anode Pad Size
0.93 x 0.52
mm
Anode Pad Opening
0.82 x 0.41
mm
Thickness
377 ± 10%
μm
Wafer Size
100
mm
Anode Metalization (Al)
4
μm
Cathode Metalization (NiV/Ag)
1.8
μm
Frontside Passivation
Polyimide


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