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2MBI150NB-120 Datasheet(PDF) 3 Page - Fuji Electric

Part # 2MBI150NB-120
Description  IGBT MODULE ( N series )
Download  4 Pages
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Manufacturer  FUJI [Fuji Electric]
Direct Link  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2MBI150NB-120 Datasheet(HTML) 3 Page - Fuji Electric

  2MBI150NB-120 Datasheet HTML 1Page - Fuji Electric 2MBI150NB-120 Datasheet HTML 2Page - Fuji Electric 2MBI150NB-120 Datasheet HTML 3Page - Fuji Electric 2MBI150NB-120 Datasheet HTML 4Page - Fuji Electric  
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background image
0,001
0,01
0,1
1
0,001
0,01
0,1
IGBT
Diode
Transient thermal resistance
Pulse width : PW [sec]
0
500
1000
1500
2000
0
200
400
600
800
1000
800V
600V
Vcc=400V
0
5
10
15
20
25
Dynamic input characteristics
Tj=25°C
Gate charge : Qg
[nC]
10
100
1000
tf
tr
toff
ton
Switching time vs. RG
Vcc=600V, Ic=150A, VGE=±15V, Tj=25°C
Gate resistance : RG [
Ω ]
0
1
2
3
4
5
0
100
200
300
Tj=125°C
25°C
Forward current vs. Forward voltage
V GE =OV
Forward voltage : VF [V]
0
100
200
300
10
100
Irr
25°C
trr
25°C
trr
125°C
Irr
125°C
Reverse recovery characteristics
trr, Irr vs. IF
Forward current : IF [A]
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
1400
RBSOA (Repetitive pulse)
SCSOA
(non-repetitive pulse)
Reversed biased safe operating area
+VGE=15V, -VGE <15V, Tj<125°C, RG >5.6
Ω
Collector-Emitter voltage : VCE [V]


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