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2MBI150NB-120 Datasheet(PDF) 3 Page - Fuji Electric |
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2MBI150NB-120 Datasheet(HTML) 3 Page - Fuji Electric |
3 / 4 page 0,001 0,01 0,1 1 0,001 0,01 0,1 IGBT Diode Transient thermal resistance Pulse width : PW [sec] 0 500 1000 1500 2000 0 200 400 600 800 1000 800V 600V Vcc=400V 0 5 10 15 20 25 Dynamic input characteristics Tj=25°C Gate charge : Qg [nC] 10 100 1000 tf tr toff ton Switching time vs. RG Vcc=600V, Ic=150A, VGE=±15V, Tj=25°C Gate resistance : RG [ Ω ] 0 1 2 3 4 5 0 100 200 300 Tj=125°C 25°C Forward current vs. Forward voltage V GE =OV Forward voltage : VF [V] 0 100 200 300 10 100 Irr 25°C trr 25°C trr 125°C Irr 125°C Reverse recovery characteristics trr, Irr vs. IF Forward current : IF [A] 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 1400 RBSOA (Repetitive pulse) SCSOA (non-repetitive pulse) Reversed biased safe operating area +VGE=15V, -VGE <15V, Tj<125°C, RG >5.6 Ω Collector-Emitter voltage : VCE [V] |
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