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MIC4425 Datasheet(PDF) 3 Page - Micrel Semiconductor |
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MIC4425 Datasheet(HTML) 3 Page - Micrel Semiconductor |
3 / 13 page July 2005 3 MIC4423/4424/4425 MIC4423/4424/4425 Micrel, Inc. MIC4423/4424/4425 Electrical Characteristics (Note 5) 4.5V ≤ V S ≤ 18V; TA = 25°C, bold values indicate –40°C ≤ TA ≤ +85°C; unless noted. Symbol Parameter Conditions Min Typ Max Units Input V IH Logic 1 Input Voltage 2.4 V V IL Logic 0 Input Voltage 0.8 V I IN Input Current 0V ≤ V IN ≤ VS –1 1 µA –10 10 µA Output V OH High Output Voltage V S–0.025 V V OL Low Output Voltage 0.025 V R O Output Resistance HI State I OUT = 10mA, VS = 18V 2.8 5 Ω V IN = 0.8V, IOUT = 10mA, VS = 18V 3.7 8 Ω Output Resistance LO State I OUT = 10mA, VS = 18V 3.5 5 Ω V IN = 2.4V, IOUT = 10mA, VS = 18V 4.3 8 Ω I PK Peak Output Current 3 A I Latch-Up Protection >500 mA Withstand Reverse Current Switching Time (Note 4) t R Rise Time test Figure 1, C L = 1800pF 23 35 ns 28 60 ns t F Fall Time test Figure 1, C L = 1800pF 25 35 ns 32 60 ns t D1 Delay Tlme test Ffigure 1, C L = 1800pF 33 75 ns 32 100 ns t D2 Delay Time test Figure 1, C L = 1800pF 38 75 ns 38 100 ns t PW Pulse Width test Figure 1 400 ns Power Supply I S Power Supply Current V IN = 3.0V (both inputs) 1.5 2.5 mA 2 3.5 mA I S Power Supply Current V IN = 0.0V (both inputs) 0.15 0.25 mA 0.2 0.3 mA Note 1. Exceeding the absolute maximum rating may damage the device. Note 2. The device is not guaranteed to function outside its operating rating. Note 3. Devices are ESD sensitive. Handling precautions recommended. ESD tested to human body model, 1.5k in series with 100pF. Note 4. Switching times guaranteed by design. Note 5. Specification for packaged product only. Absolute Maximum Ratings (Note 1) Supply Voltage ........................................................... +22V Input Voltage .................................. V S + 0.3V to GND – 5V Junction Temperature................................................150°C Storage Temperature Range ......................–65°C to 150°C Lead Temperature (10 sec.) ......................................300°C ESD Susceptability, Note 3 ..................................... 1000V Operating Ratings (Note 2) Supply Voltage (V S) ......................................+4.5V to +18V Temperature Range C Version ....................................................0°C to +70°C B Version ................................................–40°C to +85°C Package Thermal Resistance DIP θ JA ............................................................. 130°C/W DIP θ JC ............................................................... 42°C/W Wide-SOIC θ JA ................................................. 120°C/W Wide-SOIC θ JC ................................................... 75°C/W SOIC θ JA ........................................................... 120°C/W SOIC θ JC ............................................................ 75°C/W |
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