DS-RM24EP–048C–6/2014

Features

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Gamma Radiation Tolerance: 50 kGy

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e-Beam Sterilization Tolerance: 50 kGy

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Memory array: 32-Kbit, 64-Kbit, and 128-Kbit EEPROM-compatible boot memory

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Single supply voltage: 2.7V - 3.6V

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-100kHz

-400kHz

-1MHz

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Page size: 32 byte / 64 byte

-Byte and Page Write from 1 to 32 or 64 bytes

-Byte Write within 50µs

-Page Write within 1ms

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Random and sequential Read modes

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Write protect of the whole memory array

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RoHS-compliant and halogen-free packaging

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Description

comprised of devices with densities of 32 Kbit, 64 Kbit and 128 Kbit utilizing Adesto's

CBRAM resistive memory technology. The memory devices use a single low-voltage

supply ranging from 2.7V to 3.6V.

consisting of a Serial Data (SDA) and Serial Clock (SCL). The maximum clock (SCL)

frequency is 1MHz.

The devices have both byte write and page write capability. Page write is up to 32/64

bytes.

Both random and sequential reads are available. Sequential reads are capable of

reading the entire memory in one operation.

External address pins permit up to eight devices on the same data bus. The devices

are available in standard 8-pin SOIC packages.

RM24EP32 | RM24EP64 | RM24EP128

32/64/128-Kbit 2.7V Minimum

Sterilization-Tolerant Boot Memory

Preliminary Datasheet