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BCW66G Datasheet(PDF) 2 Page - Continental Device India Limited |
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BCW66G Datasheet(HTML) 2 Page - Continental Device India Limited |
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2 / 3 page  Continental Device India Limited Data Sheet Page 2 of 3 RATINGS (at TA = 25°C unless otherwise specified) Limiting values BCW 66F 66G 66H Collector–base voltage (open emitter) –VCBO max. 75 75 75 V Collector–emitter voltage (open base) –VCEO max. 45 45 45 V Emitter–base voltage (open collector) –VEBO max. 5 5 5 V Collector current (d.c.) –I C max. 800 800 800 mA Total power dissipation at Tamb = 25°C Ptot max 225 225 225 mW Storage temperature Tstg –55 to +150 ° C THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient Rth j–a 556 556 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –IC = 10 mA; IB = 0 –V(BR)CEOmin. 45 45 45 V Collector–emitter breakdown voltage –IC = 10 mA; VEB = 0 –V(BR)CES min. 75 75 75 V Emitter–base breakdown voltage –IE = 10 mA; IC = 0 –V(BR)EBO min. 5 5 5 V Collector cut–off current –VCE = 45 V; IC = 0 V –ICES max. 20 20 20 nA Emitter cut–off current VEB = 4 V; IC =0 IEBO max. 20 20 20 nA Output capacitance at f = 1 MHz IE = 0; –VCB = 10 V Cc max. 12 12 12 pF Input capacitance at f = 1 MHz IC = 0; –VEB = 0.5 V Ce max. 80 80 80 pF Saturation voltages –IC = 500 mA; –IB = 50 mA –VCEsat max. 0.7 0.7 0.7 V –IC = 100 mA; –IB = 10 mA –VCEsat typ. 0.3 0.3 0.3 V –IC = 500 mA; –IB = 50 mA –VBEsat max. 2 2 2 V Noise figure at RS = 1 kW –IC = 0.2 mA; –VCE = 5 V f = 1 KHz, BW = 200 Hz NF max. 10 10 10 dB Current Gain-Bandwidth Product IC = 20 mA, VCE = 10 V, f = 100 MHz min. 100 100 100 MHz BCW66F, BCW66G BCW66H |
Similar Part No. - BCW66G |
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Similar Description - BCW66G |
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