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AT25DF512C-MAHN-T Datasheet(PDF) 8 Page - List of Unclassifed Manufacturers

Part # AT25DF512C-MAHN-T
Description  512-Kbit, 1.65V Minimum SPI Serial Flash Memory with Dual-I/O Support
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Manufacturer  ETC2 [List of Unclassifed Manufacturers]
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AT25DF512C-MAHN-T Datasheet(HTML) 8 Page - List of Unclassifed Manufacturers

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AT25DF512C
DS-25DF512C–030A–4/2014
To perform the Read Array operation, the CS pin must first be asserted and the appropriate opcode (0Bh or 03h) must be
clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the
starting address location of the first byte to read within the memory array. Following the three address bytes, an
additional dummy byte needs to be clocked into the device if the 0Bh opcode is used for the Read Array operation.
After the three address bytes (and the dummy byte if using opcode 0Bh) have been clocked in, additional clock cycles
will result in data being output on the SO pin. The data is always output with the MSB of a byte first. When the last byte
(00FFFFh) of the memory array has been read, the device will continue reading back at the beginning of the array
(000000h). No delays will be incurred when wrapping around from the end of the array to the beginning of the array.
Deasserting the CS pin will terminate the read operation and put the SO pin into high-impedance state. The CS pin can
be deasserted at any time and does not require a full byte of data be read.
Figure 7-1.
Read Array - 03h Opcode
Figure 7-2.
Read Array - 0Bh Opcode
7.2
Dual-Output Read Array
The Dual-Output Read Array command is similar to the standard Read Array command and can be used to sequentially
read a continuous stream of data from the device by simply providing the clock signal once the initial starting address has
been specified. Unlike the standard Read Array command, however, the Dual-Output Read Array command allows two
bits of data to be clocked out of the device on every clock cycle, rather than just one.
The Dual-Output Read Array command can be used at any clock frequency, up to the maximum specified by f
RDDO. To
perform the Dual-Output Read Array operation, the CS pin must first be asserted and then the opcode 3Bh must be
clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the
location of the first byte to read within the memory array. Following the three address bytes, a single dummy byte must
also be clocked into the device.
After the three address bytes and the dummy byte have been clocked in, additional clock cycles will result in data being
output on both the SO and SIO pins. The data is always output with the MSB of a byte first and the MSB is always output
on the SO pin. During the first clock cycle, bit seven of the first data byte is output on the SO pin, while bit six of the same
data byte is output on the SIO pin. During the next clock cycle, bits five and four of the first data byte are output on the SO
SCK
CS
SI
SO
MSB
MSB
23
1
0
00000011
67
5
410 11
9
812
37 38
33
36
35
34
31 32
29 30
39 40
OPCODE
AAAA
AAA
A
A
MSB
MSB
DDDDDDD
D
D
D
ADDRESS BITS A23-A0
DATA BYTE 1
HIGH-IMPEDANCE
K
S
I
O
MSB
MSB
23
1
0
00001011
67
5
410 11
9
812
39
42 43
41
40
37 38
33
36
35
34
31 32
29 30
44
47 48
46
45
OPCODE
AAAA
AAA
A
A
MSB
XXXXXXX
X
MSB
MSB
DDDDDDD
D
D
D
ADDRESS BITS A23-A0
DON'T CARE
DATA BYTE 1
HIGH-IMPEDANCE


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