SI4660DY datasheet(3/10 Pages) VISHAY

Part #	SI4660DY

Description	N-Channel 25-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 69533

S09-0138-Rev. B, 02-Feb-09

www.vishay.com

3

Vishay Siliconix

Si4660DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

14

28

42

56

70

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 4 V

VDS - Drain-to-Source Voltage (V)

VGS =3 V

0.0040

0.0045

0.0050

0.0055

0.0060

0.0065

0.0070

014

28

42

56

70

ID - Drain Current (A)

VGS =10 V

VGS =4.5 V

0

2

4

6

8

10

0.0

6.2

12.4

18.6

24.8

31.0

Qg - Total Gate Charge (nC)

ID =10A

VDS =10 V

VDS =20 V

VDS =15 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.4

0.8

1.2

1.6

2.0

0

1234

5

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

TJ = -- 55 °C

Crss

0

600

1200

1800

2400

3000

0

5

10

15

20

25

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature ( °C)

VGS =10 V

VGS =4.5 V

ID = 15 A

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