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IRFU3518PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFU3518PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  2 www.irf.com IRFR/U3518PbF Dynamic @ TJ = 25°C (unless otherwise specified) Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 24 29 m Ω VGS = 10V, ID = 18A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 80V, VGS = 0V ––– ––– 250 VDS = 64V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V IGSS IDSS Drain-to-Source Leakage Current Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 34 ––– ––– S VDS = 25V, ID = 18A Qg Total Gate Charge ––– 37 56 ID = 18A Qgs Gate-to-Source Charge ––– 11 ––– nC VDS = 40V Qgd Gate-to-Drain ("Miller") Charge ––– 12 ––– VGS = 10V td(on) Turn-On Delay Time ––– 12 ––– VDD = 40V tr Rise Time ––– 25 ––– ID = 18A td(off) Turn-Off Delay Time ––– 37 ––– RG = 9.1Ω tf Fall Time ––– 13 ––– VGS = 10V Ciss Input Capacitance ––– 1710 ––– VGS = 0V Coss Output Capacitance ––– 270 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 33 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1780 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 170 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 330 ––– VGS = 0V, VDS = 0V to 64V ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 160 mJ IAR Avalanche Current ––– 18 A EAR Repetitive Avalanche Energy ––– 11 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V trr Reverse Recovery Time ––– 77 ––– ns TJ = 25°C, IF = 18A Qrr Reverse RecoveryCharge ––– 210 ––– nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 38 150 A |
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