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NDF02N60ZG Datasheet(PDF) 1 Page - ON Semiconductor |
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NDF02N60ZG Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 10 page © Semiconductor Components Industries, LLC, 2013 July, 2013 − Rev. 7 1 Publication Order Number: NDF02N60Z/D NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF NDD Unit Drain−to−Source Voltage VDSS 600 V Continuous Drain Current RqJC (Note 1) ID 2.4 2.2 A Continuous Drain Current RqJC TA = 100°C (Note 1) ID 1.6 1.4 A Pulsed Drain Current, VGS @ 10 V IDM 10 9 A Power Dissipation RqJC PD 24 57 W Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, ID = 2.4 A EAS 120 mJ ESD (HBM) (JESD 22−A114) Vesd 2500 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 17) VISO 4500 V Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns Continuous Source Current (Body Diode) IS 2.4 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature 2. ISD = 2.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C http://onsemi.com VDSS RDS(on) (MAX) @ 1 A 600 V 4.8 W N−Channel G (1) D (2) S (3) NDF02N60ZG TO−220FP CASE 221D NDD02N60ZT4G DPAK CASE 369AA 1 2 3 4 NDD02N60Z−1G IPAK CASE 369D 1 2 3 4 See detailed ordering, marking and shipping information in the package dimensions section on page 7 of this data sheet. ORDERING AND MARKING INFORMATION 1 2 3 1 2 3 NDF02N60ZH TO−220FP CASE 221AH |
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