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REF5020-Q1 Datasheet(PDF) 2 Page - Texas Instruments |
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REF5020-Q1 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 21 page REF5020-Q1, REF5025-Q1, REF5030-Q1 REF5040-Q1, REF5045-Q1, REF5050-Q1 SBOS456G – SEPTEMBER 2008 – REVISED OCTOBER 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ABSOLUTE MAXIMUM RATINGS (1) REF50xx PARAMETER MIN MAX UNIT Input voltage 18 V Output short-circuit 30 mA Operating temperature range –40 125 °C Storage temperature range –65 150 °C Junction temperature (TJ max) 150 °C (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. ESD RATINGS Over operating free-air temperature range (unless otherwise noted). PARAMETER VALUE UNIT REF5020AQDRQ1 500 REF5030AQDRQ1 1000 Human Body Model (HBM) REF5040AQDRQ1 500 V ESD REF5045AQDRQ1 1000 REF5050AQDRQ1 500 Machine Model (MM) 200 V Charged-Device Model (CDM) 1000 V 2 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated |
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