FZT649 datasheet(4/7 Pages) DIODES

Part #	FZT649

Description	25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

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Manufacturer	DIODES [Diodes Incorporated]

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4 / 7 page

FZT649

Document Number DS33148 Rev. 5 - 2

4 of 7

www.diodes.com

March 2014

A Product Line of

Diodes Incorporated

FZT649

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

35



V

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

25



V

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

7



V

IE = 100µA

Collector Cut-Off Current

ICBO



0.1

µA

VCB = 30V



10

VCB = 30V, TA = +100°C

Emitter Cut-Off Current

IEBO



100

nA

VEB = 4V

Collector-Emitter Saturation Voltage (Note 9)

VCE(sat)



0.12



0.3

V

IC = 1A, IB = 100mA



0.40

0.6

IC = 3A, IB = 300mA

Base-Emitter Saturation Voltage (Note 9)

VBE(sat)



0.9

1.25

V

IC = 1A, IB = 100mA

Base-Emitter Turn-On Voltage (Note 9)

VBE(on)



0.8

1.0

V

IC = 1A, VCE = 2V

DC Current Gain (Note 9)

hFE

70

200



IC = 50mA, VCE = 2V

100

200

300

IC = 1A, VCE = 2V

75

150



IC = 2A, VCE = 2V

15

50



IC = 6A, VCE = 2V

Current Gain-Bandwidth Product

fT

150

240



MHz

VCE = 5V, IC = 100mA,

f = 100MHz

Switching Times

ton



55



ns

IC = 500mA, VCC = 10V,

IB1 = -IB2 = 50mA

toff



300

-

Output Capacitance

Cobo



25

50

pF

VCB = 10V, f = 1MHz

Note:

9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

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