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FZT649TA Datasheet(PDF) 2 Page - Diodes Incorporated

Part # FZT649TA
Description  25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FZT649TA Datasheet(HTML) 2 Page - Diodes Incorporated

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FZT649
Document Number DS33148 Rev. 5 - 2
2 of 7
www.diodes.com
March 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT649
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
35
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
3
A
Peak Pulse Current
ICM
8
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
2
W
(Note 6)
3
W
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
62.5
C/W
(Note 6)
41.7
C/W
Thermal Resistance, Junction to Leads (Note 7)
RθJL
12.9
C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as note (5), except the device is mounted on 50mm x 50mm 2oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.


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