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FQB8N60C Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FQB8N60C
Description  N-Channel QFET짰 MOSFET 600 V, 7.5 A, 1.2
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQB8N60C Datasheet(HTML) 1 Page - Fairchild Semiconductor

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December 2013
Thermal Characteristics
FQB8N60C / FQI8N60C
N-Channel QFET® MOSFET
600 V, 7.5 A, 1.2 Ω
Description
©2003 Fairchild Semiconductor Corporation
FQB8N60C / FQI8N60C Rev. C1
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V,
ID = 3.75 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings T
C = 25°C unless otherwise noted.
Symbol
Parameter
FQB8N60CTM /
FQI8N60CTU
Unit
RJC
Thermal Resistance, Junction to Case, Max.
0.85
oC/W
RJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
62.5
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
40
GD
S
I2-PAK
G
S
D
D2-PAK
G
S
D
Symbol
Parameter
FQB8N60CTM / FQI8N60CTU
Unit
VDSS
Drain-Source Voltage
600
V
ID
Drain Current
- Continuous (TC = 25°C)
7.5
A
- Continuous (TC = 100°C)
4.6
A
IDM
Drain Current
- Pulsed
(Note 1)
30
A
VGSS
Gate-Source Voltage
±
30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
230
mJ
IAR
Avalanche Current
(Note 1)
7.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TA = 25°C)*
3.13
W
Power Dissipation (TC = 25°C)
147
W
- Derate above 25°C
1.18
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
300
°C
• RoHS Compliant


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