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FQB8N60C Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQB8N60C Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page December 2013 Thermal Characteristics FQB8N60C / FQI8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description ©2003 Fairchild Semiconductor Corporation FQB8N60C / FQI8N60C Rev. C1 www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 12 pF) • 100% Avalanche Tested Absolute Maximum Ratings T C = 25°C unless otherwise noted. Symbol Parameter FQB8N60CTM / FQI8N60CTU Unit RJC Thermal Resistance, Junction to Case, Max. 0.85 oC/W RJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 40 GD S I2-PAK G S D D2-PAK G S D Symbol Parameter FQB8N60CTM / FQI8N60CTU Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 7.5 A - Continuous (TC = 100°C) 4.6 A IDM Drain Current - Pulsed (Note 1) 30 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ IAR Avalanche Current (Note 1) 7.5 A EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25°C)* 3.13 W Power Dissipation (TC = 25°C) 147 W - Derate above 25°C 1.18 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. 300 °C • RoHS Compliant |
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