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FJPF5027RTU Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FJPF5027RTU Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  ©2003 Fairchild Semiconductor Corporation Rev. A, December 2003 NPN Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 10 A IB Base Current 1.5 A PC Collector Dissipation ( TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped 800 V ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A 10 8 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 2 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 60 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.2A 15 MHz tON Turn On Time VCC = 400V IC = 5IB1 = -2.5IB2 = 2A RL = 200Ω 0.5 µs tSTG Storage Time 3 µs tF Fall Time 0.3 µs Classification N R O hFE1 10 ~ 20 15 ~ 30 20 ~ 40 FJPF5027 High Voltage and High Reliability • High Speed Switching •Wide SOA 1 1.Base 2.Collector 3.Emitter TO-220F |
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