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2N5198 Datasheet(PDF) 1 Page - InterFET Corporation |
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2N5198 Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 1 page 8/2014 2N5196, 2N5197, 2N5198, 2N5199 N-Channel Dual Silicon Junction Field-Effect Transistor ∙ Differencial Inputs Absolute maximum ratings at TA = 25 oC Reverse Gate Source & Gate Drain Voltage -50V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 300 mW Power Derating 2.6 mW/ oC Storage Temperature Range -65 oC to +150oC At 25 oC free air temperature 2N5196, 2N5197, 2N5198, 2N5199 Process NJ16 Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS -50 V IG = -1 uA, VDS = 0 V Gate Reverse Current IGSS -25 pA VGS = -10 V, VDS = 0 V Gate Source Cutoff Voltage VGS(OFF) -0.7 -4 V VDS = 10 V, VGS = 0 V Drain Saturation Current (pulsed) IDSS 0.7 7 mA VDS = 10 V, VGS = 0 V Dynamic Electrical Characteristics Common-Source Forward Transconductance gfs 1 4 mS VDS = 10 V, ID = 5 mA f = 1 kHz Common-Source Input Capacitance Ciss 6 pF VDS = -10 V, VGS = 1 V f = 1 MHz Common-Source Reverse Transfer Capacitance Crss 2 pF VDS = 10 V, ID = 5 mA f = 1 MHz Equivalent Short Circuit Input Noise Voltage ~eN 20 nV/√Hz VDS = 10 V, ID = 5 mA f = 1 kHz 2N5196 2N5197 2N5198 2N5199 Test Conditions Min Max Min Max Min Max Min Max Unit s Differencial Gate-Source Voltage (VGS1-VGS2) 5 5 10 15 mV VDS = 10 V, ID = -10 mA Differencial Gate Source Voltage with Temperature Δ│VGS1-VGS2│ ΔT 5 10 20 40 μV/° C VDG = 10 V, ID = 30 μA www.interfet.com 715 N. Glenville Dr., Ste. 400 Richardson, TX 75089 (972) 238-9700 Fax (972) 238-5338 Surface Mount Version: SMP5196, SMP5197, SMP5198, SMP5199 |
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