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APTC60BBM24T3G Datasheet(PDF) 6 Page - Microsemi Corporation |
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APTC60BBM24T3G Datasheet(HTML) 6 Page - Microsemi Corporation |
6 / 8 page APTC60BBM24T3G www.microsemi.com 6 – 8 TJ=25°C TJ=150°C 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) Source to Drain Diode Forward Voltage Delay Times vs Current td(on) td(off) 0 20 40 60 80 100 120 140 0 20406080 100 120 140 160 ID, Drain Current (A) VDS=400V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) VDS=400V RG=2.5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0 1 2 3 4 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) VDS=400V RG=2.5Ω TJ=125°C L=100µH Eon Eoff 0 1 2 3 4 5 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy vs Gate Resistance VDS=400V ID=95A TJ=125°C L=100µH hard switching ZCS ZVS 0 50 100 150 200 250 300 10 20 30 40 50 60 70 80 90 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C |
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