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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

Image Reject Mixer

12.0-40.0 GHz

XM1001-BD

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

Features

 Fundamental Image Reject Mixer

 8.0 dB Conversion Loss

 20.0 dB Image Rejection

 +25.0 dBm Input Third Order Intercept (IIP3)

 100% On-Wafer RF Testing

 100% Visual Inspection to MIL-STD-883 Method

2010

 RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s 12.0-40.0 GHz GaAs MMIC

fundamental image reject mixer can be used as an

up- or down-converter. The device has a conversion

loss of 8.0 dB with a 20.0 dB image rejection across

the band. I and Q mixer outputs are provided and an

external 90 degree hybrid is required to select the

desired sideband. This MMIC uses M/A-COM Tech’s

GaAs PHEMT device model technology, and is

based upon electron beam lithography to ensure

high repeatability and uniformity. The chip has

surface passivation to protect and provide a rugged

part with backside via holes and gold metallization to

allow either a conductive epoxy or eutectic solder

die attach process. This device is well suited for

Millimeter-wave

Point-to-Point

Radio,

LMDS,

SATCOM and VSAT applications.

Ordering Information

Part Number

Package

XM1001-BD-000V

“V” - vacuum release

gel paks

XM1001-BD-EV1

evaluation module

Absolute Maximum Ratings

Parameter

Absolute Max.

Gate Bias Voltage (Vg)

+0.3 VDC

Input Power (RF Pin)

+20.0 dBm

Input Power (IF Pin)

+20.0 dBm

Storage Temperature (Tstg)

-65 °C to +165 °C

Operating Temperature (Ta)

-55 °C to +125 °C

Chip Device Layout