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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

Doubler and Power Amplifier

18.0-21.0/36.0-42.0 GHz

XX1001-BD

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

Features

 Integrated Doubler and Power Amplifier

 Excellent Saturated Output Stage

 +26.0 dBm Output Power

 50.0 dBc Fundamental Suppression

 100% On-Wafer RF, DC & Output Power Testing

 100% Commercial-Level Visual Inspection Using

Mil-Std-883 Method 2010

 RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s 18.0-21.0/36.0-42.0 GHz GaAs

MMIC doubler integrates a doubler and 4-stage

power amplifier. The device provides better than

+26.0 dBm output power and has excellent

fundamental rejection. This MMIC uses M/A-COM

Tech’s GaAs PHEMT device model technology, and

is based upon electron beam lithography to ensure

high repeatability and uniformity. The chip has

surface passivation to protect and provide a rugged

part with backside via holes and gold metallization to

allow either a conductive epoxy or eutectic solder

die attach process. This device is well suited for

Millimeter-wave

Point-to-Point

Radio,

LMDS,

SATCOM and VSAT applications.

Ordering Information

Part Number

Package

XX1001-BD-000V

vacuum release gel paks

XX1001-BD-EV1

evaluation board

Chip Device Layout

Parameter

Absolute Max.

Supply Voltage (Vd)

+6.0 VDC

Supply Current (Id)

800 mA

Gate Bias Voltage (Vg)

+0.3 VDC

Input Power (RF Pin)

TBD

Storage Temperature (Tstg)

-65 °C to +165 °C

Operating Temperature (Ta)

Channel Temperature (Tch)

(1)

Channel temperature directly affects a device's MTTF. Channel tem-

perature should be kept as low as possible to maximize lifetime.