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2N1613 Datasheet(PDF) 2 Page - Continental Device India Limited

Part No. 2N1613
Description  NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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Maker  CDIL [Continental Device India Limited]
Homepage  http://www.cdilsemi.com
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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N1613
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNITS
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
| hfe |IC=1mA, VCE=5V,
30
100
f=1kHz
IC=5mA, VCE=10V,
35
150
f=1kHz
Input Impedance
hib
IC=1mA,VCB=5V,f=1kHz
24
34
IC=5mA,VCE=10V,f=1kHz
4.0
8.0
Voltage Feedback Ratio
hrb
IC=1mA,VCE=5V,f=1.0kHz
3.0
X10
-4
IC=5mA,VCE=10V,f=1kHz
3.0
X10
-4
Output Admittance
hob
IC=1mA,VCE=5V,f=1kHz
0.05
0.5
µmho
IC=5mA,VCE=10V,f=1kHz
0.05
0.5
µmho
Current Gain Bandwidth Product
fT*IC=50mA,VCE=10V,f=20MHz
60
ΜΗz
Output Capacitance
Cob
VCB=10V, IE=0, f=100kHz
10
25
pF
Input Capacitance
Cib
VEB=0.5V, IC=0, f=100kHz
50
80
pF
Noise Figure
NF
IC=300µA,VCE=10V,RS=510Ω
12
d
Β
f=1kHz
*Pulse Test: Pulse Length <300
µs, Duty Cycle <1.0%
Continental Device India Limited
Data Sheet
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