MJE270 datasheet(2/3 Pages) CDIL

Part #	MJE270

Description	PLASTIC POWER TRANSISTOR

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Emitter-base voltage (open collector)

VEBO

max.

5.0 V

Collector current

IC

max.

2.0 A

Collector current (peak)

IC

max.

4.0 A

Base current

IB

max.

0.1 A

Total power dissipation up to TC = 25°C

Ptot

max.

15 W

Derate above 25°C

max.

0.12 W/°C

Total power dissipation up to TA = 25°C

Ptot

max.

1.5 W

Derate above 25°C

max.

0.012 W/°C

Junction temperature

Tj

max.

150 ºC

Storage temperature

Tstg

–65 to +150 ºC

THERMAL RESISTANCE

From junction to case

Rth j–c

8.33 °C/W

From junction to ambient

Rth j–a

83.3 °C/W

CHARACTERISTICS

Tamb = 25°C unless otherwise specified

Collector cutoff current

IE = 0; VCB = 100 V

ICBO

max.

0.3 mA

IB = 0; VCE = 100 V

ICEO

max.

1.0 mA

Emitter cut-off current

IC = 0; VEB = 5 V

IEBO

max.

0.1 mA

Breakdown voltages

IC = 10 mA; IB = 0

VCEO(sus)*

min.

100 V

IC = 1 mA; IE = 0

VCBO

min.

100 V

IE = 1 mA; IC = 0

VEBO

min.

5 V

Saturation voltages

IC = 20 mA; IB = 0.2 mA

VCEsat*

max.

2.0 V

IC = 120 mA; IB = 1.2 mA

VCEsat*

max.

3.0 V

Base emitter on voltage

IC = 120 mA; VCE = 10V

VBE(on)*

max.

2.0 V

D.C. current gain

IC = 20 mA; VCE = 3 V

hFE*

min.

500

IC = 120 mA; VCE = 10 V

hFE*

min.

1500

Transition frequency f = 1 MHz

IC = 0.05 A; VCE = 5 V

fT(1)

min.

6.0 MHz

Second Breakdown Collector

Current with base Forward Biased

VCE = 40V; t = 1.0s; (non-repetitive)

IS/b

min.

375 mA

(1) fT = |hfe|• ftest

* Pulse test: pulse width

≤ 300 µs; duty cycle ≤ 2%.

MJE270, MJE271

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