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MJE13006 Datasheet(PDF) 1 Page - Continental Device India Limited |
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MJE13006 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page  NPN PLASTIC POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13006 UNIT Collector Emitter Sustaining Voltage VCEO (sus) 300 V Collector Emitter Voltage VCEV 600 V Emitter Base Voltage VEBO 9 V Collector Current Continuous IC 8 A *Peak ICM 16 A Base Current Continuous IB 4 A *Peak IBM 8 A Emitter Current Continuous IE 12 A *Peak IEM 24 A Power Dissipation upto Ta=25ºC PD 2 W Derate above=25ºC 16 mW/ºC Power Dissipation upto Tc=25ºC PD 80 W Derate above=25ºC 640 mW/ºC Operating And Storage Junction Temperature Range Tj, Tstg - 65 to +150 ºC * Pulse Test: Pulse Width =5ms, Duty Cycle<10% THERMAL RESISTANCE Junction to Case Rth (j-c) 1.56 ºC/W Junction to Ambient in free air Rth (j-a) 62.5 ºC/W Maxmium Lead Temperature for Soldering Purpose 1/8" from Case for 5 Seconds TL 275 ºC ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter sustaining voltage **VCEO(sus) IC=10mA, IB=0 MJE13006 300 V MJE13007 400 V Collector Cut Off Current ICEV VCEV=Rated Value,VBE=(off)=1.5V 1.0 mA TC=100ºC VCEV=Rated Value,VBE=(off)=1.5V 5.0 mA Emitter Cut Off Current IEBO VEB=9V, IC=0 1.0 mA DC Current Gain **hFE IC=2A, VCE=5V 8 60 IC=5A, VCE=5V 5 30 **Pulse Test: Pulse Width=300 µµs, Duty Cycle<2% MJE13007 400 700 Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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