PTF102028 datasheet(2/7 Pages) ERICSSON

Part #	PTF102028

Description	18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

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Manufacturer	ERICSSON [Ericsson]

Direct Link	http://www.ericsson.com

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PTF 102028

2

e

15

16

17

18

19

20

21

860

880

900

920

940

960

Frequency (MHz)

35

40

45

50

55

60

65

70

VDD = 26 V

IDQ = 130 mA

Typical POUT, Gain & Efficiency (at P-1dB)

vs. Frequency

Output Pow er

Efficiency

Gain

Broadband Test Fixture Performance

4

8

12

16

20

920

930

940

950

960

Frequency (MHz)

0

10

20

30

40

50

60

Gain (dB)

Return Loss (dB)

Ef ficiency (%)

0

- 5

-10

-15

-20

-25

VDD = 26 V

IDQ = 130 mA

P

OUT = 18 W

Electrical Characteristics (100% Tested)

Characteristic

Conditions

Symbol

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 25 mA

V(BR)DSS

65

——

Volts

Drain-Source Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

——

1.0

mA

Gate Threshold Voltage

VDS = 10 V, ID = 75 mA

VGS(th)

3.0

—

5.0

Volts

Forward Transconductance

VDS = 10 V, ID = 0.5 A

gfs

—

0.9

—

Siemens

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

Vdc

Gate-Source Voltage

VGS

±20

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

PD

58

Watts

Above 25°C derate by

0.33

W/°C

Storage Temperature

TSTG

150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

3.0

°C/W

Typical Performance

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PTF102028 Datasheet(PDF) 2 Page - Ericsson

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