PTF10133 datasheet(2/6 Pages) ERICSSON

Part #	PTF10133

Description	85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

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Manufacturer	ERICSSON [Ericsson]

Direct Link	http://www.ericsson.com

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PTF 10133

e

10

11

12

13

14

15

16

17

18

860 865 870 875 880 885 890 895 900

Frequency (MHz)

40

50

60

70

80

90

100

110

120

VDD = 28 V

IDQ = 1.0 A

Typical POUT, Gain & Efficiency (at P-1dB)

vs. Frequency

Output Pow er (W)

Efficiency

Gain

Broadband Test Fixture Performance

4

8

12

16

20

860 865

870 875 880 885

890 895 900

Frequency (MHz)

0

10

20

30

40

50

60

VDD = 28 V

IDQ = 1.0 A

POUT = 85 W

Gain (dB)

Return Loss (dB)

Ef ficiency (%)

0

-10

-20

Electrical Characteristics (100% Tested)

Characteristic

Conditions

Symbol

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 25 mA

V(BR)DSS

65

—

Volts

Drain-Source Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1.0

mA

Gate Threshold Voltage

VDS = 10 V, ID = 75 mA

VGS(th)

3.0

—

5.0

Volts

Forward Transconductance

VDS = 10 V, ID = 3 A

gfs

—

3.0

—

Siemens

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

Vdc

Gate-Source Voltage

VGS

±20

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

PD

205

Watts

Above 25°C derate by

1.18

W/°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

0.85

°C/W

Typical Performance

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PTF10133 Datasheet(PDF) 2 Page - Ericsson

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