ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

PARAMETER

Emitter cutoff current

Forward current transfer ratio (DC current gain)

Collector to emitter saturation voltage

Base to emitter on voltage

V

Collector cutoff current

SYMBOL

Transition frequency

(current gain - bandwidth product )

V

= 140V, l = 0

CE

B

V

= 5V, l = 0

EBO

C

l = 5A

= 2V

C

CE

, V

l = 0

E

l = 5A, V

= 2V

C

CE

MAX

250

100

2.0

2.0

l = 0.5A, V

= 10V, f

C

CE

test

V

= 10V, I = 0, f

= 1MHz

E

CB

test

CONDITIONS

pF

V

l = 200mA,

C

l = 0

B

*

(SUS)

Collector to base voltage

Emitter to base voltage

l = 0

C

5

25

MIN

140

140

Output capacitance

Collector cutoff current

V

= 140V, V

= 1.5V

CE

BE(off)

V

= 140V, V

= 1.5V, T = 150°C

CE

BE(off)

C

100

2.0

µ

A

Collector to emitter sustaining voltage

150

1.0

l = 5A, l = 0.5A

C

B

1000

*Pulsed : Pulse duration = 300 µs, duty cycle 2%.

*For PNP types voltage and current values are negative.

Fig.1 Power derating

400

350

300

250

200

150

100

50

0

0

25

50

75

100

125

150

175

200

T , Case temperature (

°C)

C

SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

MJ15004(PNP)

MJ15003(NPN)

mA

µ

A

V

= 50V, t = 1s, non-repetitive

CE

Second breakdown collector current with base

forward baised

5

1

V

= 100V, t = 1s, non-repetitive

CE

A

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